Controlled Orientation and Improved Photovoltaic Characteristics of Cu(In,Ga)‎Se2 Solar Cells via Using In2Se3 Seeding Layers

الملخص EN

In2Se3 films were utilized as seeding layers in the synthesis of Cu(In,Ga)Se2 films via the spin-coating route.

Selenizing the indium-containing precursors at 400°C resulted in the formation of the hexagonal γ-In2Se3 with the preferred (006) orientation.

Increasing the selenization temperature to 500°C yielded the (300)-oriented γ-In2Se3.

Using the preferred (006)-oriented In2Se3 as seeding layers produced the preferred (112)-oriented Cu(In,Ga)Se2 film because of the crystalline symmetry.

In contrast, the use of the (300)-oriented In2Se3 as seeding layers yielded the (220/204)-oriented Cu(In,Ga)Se2 films.

According to results obtained using SEM and the Hall effect, (112)-oriented Cu(In,Ga)Se2 films had a denser morphology and more favorable electrical properties.

Using the (112)-oriented Cu(In,Ga)Se2 films as the absorber layer in the solar devices resulted in a significant increase in the conversion efficiency.