دراسة الاستجابية و الكفاءة الكمية لنبطية P-N السيليكونية المحضرة بطريقة بلازما الحاقن النبضي

الملخص EN

In this work we have used plasma pulsed injector to prepare a P-N junction.

Antimony was deposited on P-type silicon wafer and Indium was deposited on N-type silicon wafer.

They were considered as thin film which was bombarded with accelerated hydrogen-ions from the pulsed plasma injector.

Optical tests were conducted for the both junctions to evaluate their performance as optical detectors.

These include the spectral response quantum efficiency and detectivity.

They showed high response and efficiency for the long wavelength in the near IR region.

It showed a relatively higher detectivity which increased with the number of discharges.

For antimony and indium implanted samples we have noticed an increase in the response time of the detector with the number of discharges.

These findings allow the possibility to use them in the near IR-detector and semiconductor lasers in the wavelength range 850-950nm as well as in the applications of optical communication systems.

This work also revealed the possibility of using the pulsed plasma injection to modify the material surfaces as well as the ultering the semiconductor surfaces.

In this work we have used plasma pulsed injector to prepare a P-N junction.

Antimony was deposited on P-type silicon wafer and Indium was deposited on N-type silicon wafer.

They were considered as thin film which was bombarded with accelerated hydrogen-ions from the pulsed plasma injector.

Optical tests were conducted for the both junctions to evaluate their performance as optical detectors.

These include the spectral response quantum efficiency and detectivity.

They showed high response and efficiency for the long wavelength in the near IR region.

It showed a relatively higher detectivity which increased with the number of discharges.

For antimony and indium implanted samples we have noticed an increase in the response time of the detector with the number of discharges.

These findings allow the possibility to use them in the near IR-detector and semiconductor lasers in the wavelength range 850-950nm as well as in the applications of optical communication systems.

This work also revealed the possibility of using the pulsed plasma injection to modify the material surfaces as well as the ultering the semiconductor surfaces