الانتقالات الإلكترونية لأغشية أوكسيد الزنك ZnO المحضرة بطريقة الأكسدة الحرارية

الملخص EN

ZnO thin films were prepared by using the rapid thermal oxidation technique.

Oxidation of evaporated Zn was carried out by using hot plate at a temperature of 350°C for five minutes to obtain the best oxidation for Zn films which sedimented on cover slides.

The thickness of film is 0.84 micron and the pressure of evaporating system is ١٠ -5 torr.

From spectral data of transmittance and absorbance at 300-900 nm, it was found that the direct and indirect band gap is 2.50 eV , 2.45 eV respectively.