تصنيع ودراسة مميزات التيار-الفولتية (I-V)‎ لترانزستور تأثير المجال معدن-أوكسيد-شبه موصل MOSFET

الملخص EN

This paper contain the preparation of metal-oxide- semiconductor field- effect transistor MOSFET by using the lightography technique.

In this work we studied (IV) characteristics and also some physical variables for transistor calculated.

The prepared transistor by using p- type silicon as a substrate has n-type channel (nMOSFET) its length and width equal to L=50 μm ,Z = 1000μm .

The results showed that the output characteristics (ID-VD) and the trasfer charasteristics (IDVG) was in agreement with the theoretical behaviour of the transistor , and the transistor is from the normally – on type nMOSFET depletion mode , with pinch – off voltage equal to -4 volt .