Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition

المؤلفون المشاركون

Feng, Lianghuan
Gao, Jingjing
Li, Wei
Tian, Caijuan
Zhang, Jingquan
Wu, Lili

المصدر

International Journal of Photoenergy

العدد

المجلد 2012، العدد 2012 (31 ديسمبر/كانون الأول 2012)، ص ص. 1-5، 5ص.

الناشر

Hindawi Publishing Corporation

تاريخ النشر

2012-03-06

دولة النشر

مصر

عدد الصفحات

5

التخصصات الرئيسية

الكيمياء

الملخص EN

Chemical bath deposition (CBD) was used for the growth of Cd1−xZnxS thin films with low Zn content.

The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated.

The chemical growth mechanism of Cd1−xZnxS thin films was analyzed, and optimized growth conditions for the thin films were established.

The fill factor and short-circuit current were improved while Cd1−xZnxS was used to replace CdS as the window layer in CdTe solar cells.

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

Tian, Caijuan& Gao, Jingjing& Li, Wei& Feng, Lianghuan& Zhang, Jingquan& Wu, Lili. 2012. Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-480662

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

Tian, Caijuan…[et al.]. Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition. International Journal of Photoenergy No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-480662

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

Tian, Caijuan& Gao, Jingjing& Li, Wei& Feng, Lianghuan& Zhang, Jingquan& Wu, Lili. Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-480662

نوع البيانات

مقالات

لغة النص

الإنجليزية

الملاحظات

Includes bibliographical references

رقم السجل

BIM-480662