دراسة مميزات السعه الفولتية (C-V)‎ لترانزستور تأثير المجال معدن أوكسيد شبه موصل MOSFET المصنع بطريقة الطبع الضوئي

العناوين الأخرى

Studying the capacitance-voltage (C-V)‎ characteristics for the metal-oxide-semiconductor field-effect transistor MOSFET fabricated by photolithography technique

المؤلفون المشاركون

عادل حبيب عمران
إحسان محسن عباس
عبيد، ياسين نجم
الرواس، أطياف صبحي

المصدر

Journal of Kufa-Physics

الناشر

جامعة الكوفة كلية العلوم قسم الفيزياء

تاريخ النشر

2009-03-31

دولة النشر

العراق

عدد الصفحات

14

التخصصات الرئيسية

الفيزياء

الملخص الإنجليزي

This paper contain the fabrication of metal-oxide- semiconductor field- effect transistor MOSFET by using the lithography technique and studying of (C-V) characteristics in the reveres and forward bias and the effect of frequency variation on it, with calculate some important physical variable parameters for it.

The fabricated transistor by using p- type silicon as a substrate has n-type channel (n- MOSFET) its length and width equal to L=50 μm ,Z = 1000μm .

The results showed that JOURNAL OF KUFA – PHYSICS Vol.1 No.1 A Special Issue for the 2nd Conference of Pure & Applied Sciences (11-12) March  2009 88 the capacity (CG) was decreases with the increasing of the gate voltage VG in the reverse bias with frequencies (100,200,400,500) KHz, and the capacity decreases with the increasing of the applied current frequency.

The results also showed that the capacity CG increases with the increasing of the gate voltage VG in the forward bias with the same frequencies and the capacity decreases with the increasing of the applied current frequency.

The behavior of capacity-voltage in the forward and reveres biases is in good agreement with the theoretical behavior of the transistor.

نوع البيانات

أوراق مؤتمرات

رقم السجل

BIM-884625

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