An investigation of photoconductivity in indium antimonide crystal

Abstract EN

Various Hall Effects have been successfully observed in samples of n-type indium antimonide with values for conductivity, energy gap, Hall mobility and Hall coefficient all agreeing with theory.

A particular interest in developing a method for obtaining accurate values of carrier concentrations in semiconductor samples has been fulfilled with an experimental result of (1.6 × 1016 cm-3 ± 10.7 %) giving a percentage difference of (6.7 %) to a quoted value of (1.5 × 1016cm-3) at (77K) using an (80mW C.

W.

CO2) laser beam at (10.6μm) to illuminate a similar sample of n-type indium antimonide, an "Optical" Hall effect has been observed.

Although some doubt has been raised as to the validity of effect i.

e.

"thermal" rather than "Optical", values of (45.8 × 10-8 seconds) for recombination times of electron, and (3.2 × 1016cm-3) for the dynamic carrier concentration were calculated by this method.

A similar attempt at illuminating the sample with an R.

S.

catalogue ultra bright L.

E.

D proved inconsistent with theory and consequent result have been left inconclusive.