Design of high-gain wide-band microwave comos

Dissertant

Karim, Azad Rahim

University

University of Technology

Faculty

-

Department

Department of Electrical Engineering

University Country

Iraq

Degree

Ph.D.

Degree Date

2006

English Abstract

The design of the broadband amplifier is one of the main challenging aspects in emerging modern ultra wide-band radio frequency and microwave systems especially with the implementation in silicon CMOS process.

This thesis presents two novel design schemes for broadband amplification using the distributed amplifier concept.

These schemes are namely : cascaded single-stage distributed amplifier with insertion loss filters, and cascaded single-stage distributed amplifier with shunt peaking amplifier cells.

The image parameter filter sections in the conventional amplifier structure are replaced by insertion loss filters in the first method, while they are replaced by shunt peaking common-source amplifiers in the second method.

The potential benefits of the new techniques over the classical distributed amplifier techniques are : high gain, maximum flat, on-chip area saving, and reducing the complexity of the parasitic-aware optimization process.

Taking the advantages of the proposed methods, two six-stages broadband amplifiers have been successfully designed using 0.13um standard CMOS technology to offer 25dB power gain with ± ld ripple for more than 16 GHz bandwidth.

The amplifier designs have been implemented with circuit layouts and validated through simulations using "Microwave Office" package.

Main Subjects

Electronic engineering

• APA
• MLA
• AMA

Language

English

Data Type

Arab Theses

Record ID

BIM-305885