Electrical and optical characteristics of MIOS and MIMOS structures

Abstract EN

Thiis study is concerned with the conduction and switching phenomena occurring at the semiconductor-oxide interface and in the SiO layer.

The effect of introducing a metallic layer between the two insulating layers SiO and Si02 have been studied and investigated.

Carriers conduction and switching in the MIOS and MIMOS structures have been studied under infrared illumination at different positive gate bias.

Under these conditions we find evidence of electrons tunneling from Silicon substrate to the adjacent Oxide.

With sufficiently large positive gate bias, the incident infrared light cause® the gate current to switch from low current state to high current stale and the structure remains in its high current state after the optical excitation is removed with little degradation for the MIOS structure.