Studying some physical properties of bismuth oxide films and their applications in laser and optoelectronics
Dissertant
Thesis advisor
University
University of Technology
Faculty
-
Department
Applied Sciences Department
University Country
Iraq
Degree
Master
Degree Date
2013
English Abstract
In the present work, nano and micro structures of bismuth oxide thin films, prepared by reactive Q-switching pulsed laser deposition was studied using (9 nsec), (1.06 μm) Nd-YAG laser as an ablating tool for Bi target under the O2 environment on silicon and glass substrates.
Optimum conditions based on laser fluence, oxygen back ground pressure and substrate temperatures were selected.
Structural, optical, electrical and surface morphology properties of Bi2O3 films were investigated and analyzed extensively with respect to growth conditions.
Films prepared were used to fabricate photovoltaic heterojunction devices using P-type silicon, (111) oriented substrates at three different active layer thicknesses.
The X-Ray diffraction spectra at optimum laser fluence of (7.8J/cm2), oxygen pressure of (200 mbar) and Tsub of (523K) revealed that strong peaks related to tetragonal phase at 2θ=28o at (201) plane and monoclinic phase at 2θ=27.5o reflected from (121) plane of the Bi2O3 thin film.
The optical properties of Bi2O3 films at optimum condition showed high transparency and the estimated energy gap found to be about (2.6 eV).
The electrical properties of prepared films confirm n-type nature.
The electrical resistively of films prepared at different substrate temperature found to be in range of (99.85-136.86 Ω.cm) at room temperature (R.T).
Surface morphology results using; AFM and SEM, show an average grain size of Bi2O3 films at optimum condition was around (120nm).
In order to characterize the prepared device, the electrical properties were measured.
Capacitance- Voltage results showed that all junctions are of abrupt type.
The built-in potential was varying with the active layer thicknesses from (1.8 to 1.5 V.) Detector parameters results indicate that the fabricated detectors gave a responsivity in range of (0.14 A/W - 0.23A/W) at peak wavelength of (880nm), while maximum detectivity of (1.4*1011 W-1.
cm.
Hz1/2-1.6*1011 W-1.
cm.
Hz1/2)
Main Subjects
Topics
American Psychological Association (APA)
al-Wazni, Marwah Sabah Muhsin. (2013). Studying some physical properties of bismuth oxide films and their applications in laser and optoelectronics. (Master's theses Theses and Dissertations Master). University of Technology, Iraq
https://search.emarefa.net/detail/BIM-418101
Modern Language Association (MLA)
al-Wazni, Marwah Sabah Muhsin. Studying some physical properties of bismuth oxide films and their applications in laser and optoelectronics. (Master's theses Theses and Dissertations Master). University of Technology. (2013).
https://search.emarefa.net/detail/BIM-418101
American Medical Association (AMA)
al-Wazni, Marwah Sabah Muhsin. (2013). Studying some physical properties of bismuth oxide films and their applications in laser and optoelectronics. (Master's theses Theses and Dissertations Master). University of Technology, Iraq
https://search.emarefa.net/detail/BIM-418101
Language
English
Data Type
Arab Theses
Record ID
BIM-418101