A theoretical study of charge transport y at Au ZnSe and Au ZnS interfaces devices

Abstract EN

A quantum mechanical description of the dynamics of non-adiabatic electron transfer in metal/semiconductor interfaces can be achieved using simplified models of the system.

For this system we can suppose two localized quantum states donor state |D› and acceptor state |A› respectively.

Expression of rate constant of electron transfer for metal/semiconductor system derived upon quantum mechanical model and perturbation theory for transition between |?〉 and |?〉 state when the coupling matrix element coefficient is smaller than 0.025eV.

The rate of electron transfer for Au/ ZnSe and Au/ZnS interface systems is evaluated with orientation free energy using a Matlap program.

The results of the electron transfer rate constant are calculated for our modeas well as with experimental results .