Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching
Joint Authors
Lawrowski, Robert Damian
Prommesberger, Christian
Langer, Christoph
Dams, Florian
Schreiner, Rupert
Source
Advances in Materials Science and Engineering
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-04-06
Country of Publication
Egypt
No. of Pages
6
Abstract EN
The homogeneity of emitters is very important for the performance of field emission (FE) devices.
Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips.
The RIE influences mainly the anisotropy of the emitters.
Pressure has a strong impact on the anisotropic factor.
Reducing the pressure results in a higher anisotropy, but the etch rate is also lower.
A longer time of etching compensates this effect.
Furthermore an improvement of homogeneity was observed.
The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity.
At low power the height and undercut of the emitters are more constant over the whole wafer.
The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity.
This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays.
American Psychological Association (APA)
Lawrowski, Robert Damian& Prommesberger, Christian& Langer, Christoph& Dams, Florian& Schreiner, Rupert. 2014. Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching. Advances in Materials Science and Engineering،Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1015916
Modern Language Association (MLA)
Lawrowski, Robert Damian…[et al.]. Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching. Advances in Materials Science and Engineering No. 2014 (2014), pp.1-6.
https://search.emarefa.net/detail/BIM-1015916
American Medical Association (AMA)
Lawrowski, Robert Damian& Prommesberger, Christian& Langer, Christoph& Dams, Florian& Schreiner, Rupert. Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching. Advances in Materials Science and Engineering. 2014. Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1015916
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1015916