Optimization of p-GaNInGaNn-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach
Joint Authors
Kushwaha, Aniruddha Singh
Mahala, Pramila
Dhanavantri, Chenna
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-04-10
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell.
The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell.
The optimized solar cell characteristic parameters for cell area of 1 × 1 mm2 are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm2, fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern.
American Psychological Association (APA)
Kushwaha, Aniruddha Singh& Mahala, Pramila& Dhanavantri, Chenna. 2014. Optimization of p-GaNInGaNn-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1037365
Modern Language Association (MLA)
Kushwaha, Aniruddha Singh…[et al.]. Optimization of p-GaNInGaNn-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach. International Journal of Photoenergy No. 2014 (2014), pp.1-6.
https://search.emarefa.net/detail/BIM-1037365
American Medical Association (AMA)
Kushwaha, Aniruddha Singh& Mahala, Pramila& Dhanavantri, Chenna. Optimization of p-GaNInGaNn-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1037365
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1037365
