Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material
Joint Authors
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-07-06
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material.
HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current.
In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs.
However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing.
In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high I O N / I O F F ratio, low I O F F current, and excellent subthreshold swing (SS).
American Psychological Association (APA)
Lin, Yu-Hsien& Chou, Jay-Chi. 2014. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041411
Modern Language Association (MLA)
Lin, Yu-Hsien& Chou, Jay-Chi. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material. Journal of Nanomaterials No. 2014 (2014), pp.1-5.
https://search.emarefa.net/detail/BIM-1041411
American Medical Association (AMA)
Lin, Yu-Hsien& Chou, Jay-Chi. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041411
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041411