![](/images/graphics-bg.png)
III–V Nanowires: Synthesis, Property Manipulations, and Device Applications
Joint Authors
Chueh, Yu-Lun
Fang, Ming
Han, Ning
Wang, Fengyun
Yang, Zai-xing
Yip, SenPo
Dong, Guofa
Hou, Jared J.
Ho, Johnny C.
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-14, 14 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-04-07
Country of Publication
Egypt
No. of Pages
14
Main Subjects
Abstract EN
III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electronics, photonics, and sensors, even possibly on flexible substrates.
Understanding the synthesis, property manipulation, and device integration of these III–V NW materials is therefore crucial for their practical implementations.
In this review, we present a comprehensive overview of the recent development in III–V NWs with the focus on their cost-effective synthesis, corresponding property control, and the relevant low-operating-power device applications.
We will first introduce the synthesis methods and growth mechanisms of III–V NWs, emphasizing the low-cost solid-source chemical vapor deposition (SSCVD) technique, and then discuss the physical properties of III–V NWs with special attention on their dependences on several typical factors including the choice of catalysts, NW diameters, surface roughness, and surface decorations.
After that, we present several different examples in the area of high-performance photovoltaics and low-power electronic circuit prototypes to further demonstrate the potential applications of these NW materials.
Towards the end, we also make some remarks on the progress made and challenges remaining in the III–V NW research field.
American Psychological Association (APA)
Fang, Ming& Han, Ning& Wang, Fengyun& Yang, Zai-xing& Yip, SenPo& Dong, Guofa…[et al.]. 2014. III–V Nanowires: Synthesis, Property Manipulations, and Device Applications. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-14.
https://search.emarefa.net/detail/BIM-1041819
Modern Language Association (MLA)
Fang, Ming…[et al.]. III–V Nanowires: Synthesis, Property Manipulations, and Device Applications. Journal of Nanomaterials No. 2014 (2014), pp.1-14.
https://search.emarefa.net/detail/BIM-1041819
American Medical Association (AMA)
Fang, Ming& Han, Ning& Wang, Fengyun& Yang, Zai-xing& Yip, SenPo& Dong, Guofa…[et al.]. III–V Nanowires: Synthesis, Property Manipulations, and Device Applications. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-14.
https://search.emarefa.net/detail/BIM-1041819
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041819