A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness
Joint Authors
Source
Advances in Condensed Matter Physics
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-13, 13 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-04-19
Country of Publication
Egypt
No. of Pages
13
Main Subjects
Abstract EN
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication because it allows creating electrically insulating areas which enclose electrically conductive devices and device areas, respectively.
Deal and Grove developed the first model (DG-model) for the thermal oxidation of silicon describing the oxide thickness versus oxidation time relationship with very good agreement for oxide thicknesses of more than 23 nm.
Their approach named as general relationship is the basis of many similar investigations.
However, measurement results show that the DG-model does not apply to very thin oxides in the range of a few nm.
Additionally, it is inherently not self-consistent.
The aim of this paper is to develop a self-consistent model that is based on the continuity equation instead of Fick’s law as the DG-model is.
As literature data show, the relationship between silicon oxide thickness and oxidation time is governed—down to oxide thicknesses of just a few nm—by a power-of-time law.
Given by the time-independent surface concentration of oxidants at the oxide surface, Fickian diffusion seems to be neglectable for oxidant migration.
The oxidant flux has been revealed to be carried by non-Fickian flux processes depending on sites being able to lodge dopants (oxidants), the so-called DOCC-sites, as well as on the dopant jump rate.
American Psychological Association (APA)
Gerlach, G.& Maser, Karl. 2016. A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness. Advances in Condensed Matter Physics،Vol. 2016, no. 2016, pp.1-13.
https://search.emarefa.net/detail/BIM-1094945
Modern Language Association (MLA)
Gerlach, G.& Maser, Karl. A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness. Advances in Condensed Matter Physics No. 2016 (2016), pp.1-13.
https://search.emarefa.net/detail/BIM-1094945
American Medical Association (AMA)
Gerlach, G.& Maser, Karl. A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness. Advances in Condensed Matter Physics. 2016. Vol. 2016, no. 2016, pp.1-13.
https://search.emarefa.net/detail/BIM-1094945
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1094945