Analysis and simulation of mosfet differential amplifier
Other Title(s)
تحليل و محاكاة المضخم التفاضلي الذي يستخدم التزانزستور المجالي نوع معدن-اوكسيد- شبه موصل
Author
Source
Journal of Engineering and Sustainable Development
Issue
Vol. 23, Issue 6 (30 Nov. 2019), pp.1-10, 10 p.
Publisher
al-Mustansyriah University College of Engineering
Publication Date
2019-11-30
Country of Publication
Iraq
No. of Pages
10
Main Subjects
Social Sciences (Multidisciplinary)
Abstract EN
With the evolution of electronics today, a MOSFET transistor is useful in many applications such as computers due to several advantages.
In this research, an NMOS transistor differential amplifier circuit with passive load that uses a modified Wilson current mirror as a biasing circuit is analyzed, designed and implemented.
The width-to-length ratios of transistors are calculated by considering the voltage and current values at the output of the biasing circuit, and parameters such as conduction parameter, base width modulation parameter, and threshold voltage.
A MATLAB version 8.1.0.604(R2010a) programming tool is employed for calculations and the simulations are carried out via Multisim 9 software tool.
The output resistance obtained for current mirror is 2.297 "MΩ".
CMRR, output resistance, and power dissipation for differential amplifier circuit are 33.351 "dB", 61.274 "kΩ" and 6.66 "mW", respectively.
The results show that the width-to-length ratio, differential gain and common mode rejection ratio are decreased with decreasing applied voltage at the output of the biasing circuit while approximately same values obtained for output resistance and common mode gain.
The results show a good agreement between the measured values from simulation and the calculated one from With the evolution of electronics today, a MOSFET transistor is useful in many applications such as computers due to several advantages.
In this research, an NMOS transistor differential amplifier circuit with passive load that uses a modified Wilson current mirror as a biasing circuit is analyzed, designed and implemented.
The width-to-length ratios of transistors are calculated by considering the voltage and current values at the output of the biasing circuit, and parameters such as conduction parameter, base width modulation parameter, and threshold voltage.
A MATLAB version 8.1.0.604(R2010a) programming tool is employed for calculations and the simulations are carried out via Multisim 9 software tool.
The output resistance obtained for current mirror is 2.297 "MΩ".
CMRR, output resistance, and power dissipation for differential amplifier circuit are 33.351 "dB", 61.274 "kΩ" and 6.66 "mW", respectively.
The results show that the width-to-length ratio, differential gain and common mode rejection ratio are decreased with decreasing applied voltage at the output of the biasing circuit while approximately same values obtained for output resistance and common mode gain.
The results show a good agreement between the measured values from simulation and the calculated one from design.
American Psychological Association (APA)
Hashim, Munir Abbud. 2019. Analysis and simulation of mosfet differential amplifier. Journal of Engineering and Sustainable Development،Vol. 23, no. 6, pp.1-10.
https://search.emarefa.net/detail/BIM-1114095
Modern Language Association (MLA)
Hashim, Munir Abbud. Analysis and simulation of mosfet differential amplifier. Journal of Engineering and Sustainable Development Vol. 23, no. 6 (Nov. 2019), pp.1-10.
https://search.emarefa.net/detail/BIM-1114095
American Medical Association (AMA)
Hashim, Munir Abbud. Analysis and simulation of mosfet differential amplifier. Journal of Engineering and Sustainable Development. 2019. Vol. 23, no. 6, pp.1-10.
https://search.emarefa.net/detail/BIM-1114095
Data Type
Journal Articles
Language
English
Notes
-
Record ID
BIM-1114095