Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study

Abstract EN

Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications.

This review aims to describe the recent works of the first-principles density-functional study on h-BN layers.

We show physical properties induced by introduction of various kinds of defects in h-BN layers.

We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.