استخدام المركب GeSe2-x Cdx كطبقة في الخلية الشمسية و دراسة خصائص هذه الخلية

Abstract EN

This work presents the method of preparation and properties of thin films of p- GeSe2-x Cdx on a n-Ge substrate where: x = (0.3-0.7).

thickness of .

the structural, and optical properties of these samples were studied in previous papers.

The optical reflectance spectra had been recorded and observed that the prepared films have a reflectivity about 28.56% for sample x=0.7 and 24.77% for sample x=0.3 in the visible regions, so these films have a good absorption and the band gap energy values are also in the range where these can be easily utilized for maximum output conversion efficiency.

The Characteristic ( I -V) of prepared solar cells is studied by using probes of thin copper wire and silver paste.

the result showed that the efficiency of solar cell GeSe1.7 Cd0.3 is 6.92% , fill factor FF=0.69, and the cell GeSe1.3Cd0.7 is 4.37% and FF= 0.82.