Resonance tunneling current density of quantum well in a-Si Si1-xGex Super-lattice

Abstract EN

The purpose of this work is to report a theoretical study for resonance tunnelingcurrent density (J) of electrons tunneling through semiconductor super-latticesystem.

The system that we have considered is (a-Si/Si1-xGex) hetero-junctionsuper-lattice within the energy range of E< the potential barrier height (V_0).

Fromsuch system, we determined the (J) dependency on number of barriers (N) and themole fraction (x).

The results shown in this work not only shed new light on thephysics of resonant tunneling in electric barrier structure but are also helpful indesigning quantum devices based on multi-barrier tunneling structures.