تغير التوجبه البلوري لسطوح شرائح السلكون باستخدام تقنية الإظهار الكيميائي الرطب الأيزتروبك

Abstract EN

In this work، anisotropic silicon etch using KOH ، optical microscopic and X-ray diffraction testing، were used to determine the crystal orientation of the silicon wafer(100) plane , where the mechanical polishing and wet etching described the geometric dislocations pits which refers to the crystallographic and the level of (100).

Microscopic examination have been described the geometric dislocations pits which reflected from plane (100) in the forms of four fold flat symmetry which refers to that plane in Silicon wafer, as the distribution of Miller Indices in the cubic system, by the impact chemical wet KOH with concentration 30 wt%, and an etching temperature of 70°C.

The crystal orientation of silicon wafer has been changed from (100) to (111) plane, by chemical wet KOH through cutting 54,7°, the dislocations pits appear in geometric forms in conical shape which refers to the direction [111] for silicon wafer، by the impact chemical wet KOH with concentration 44 wt%, and an etching temperature of 120°C for 20-30min.