The electrical and optical properties of SnO2 – Si(n)‎ structure solar cells

Abstract EN

In this paper the SnO2 will be examined to be used as a transparent antireflection coating with the n –type silicon wafer to fabricate the deposited SnO2 silicon Solar cell using vacuum evaporation technique.

This SnO2 layer is simultaneously an antireflecting coating and a transparent upper contact.

The oxidation of the Si surface takes place simultaneously with the evaporation process.

A semiconductor – insulator – semiconductor (SIS) structure was obtained in such a way.

The photoelectrical parameters of such SIS system of AM 1.5 conditions are: the short circuit current 18.5 mA/cm2, the open circuit voltage 0.48 V and the efficiency is 7.0%.

The subgap response of the resulted structure is particularly strong and extends to wavelength up to 1100nm.