The influence of deposition conditions on the electrical parameters OF ZnO Thin films

Abstract EN

-The study of ZnO thin films , which are deposited by the chemical reactions transport method , has showed that in the temperature range of substrate Ts = 830-890K, for the coefficient of the relative emission t} = 3.5 - 4% and for the water vapour partial pressure in the system P^iov -S' 14%, the mobility and the electronic concentration is respectively 140-160 cm2.

V1.^1 and 3.1016 - 4.10v cm'3.

It has showed also that the curve jun (T) follows the Gauss function.

The electrical measurements ha\>e showed that the electrical properties of monocrystalline and polycristalline samples of ZnO are no different, if their deposition conditions are comparable .