Growth and Characterization of Ge100-xDyx(x≤2)‎ Nanowires

Abstract EN

Novel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of the nanowires.

The nanomaterials are fabricated on gold nucleation seeds on Si/SiO2 substrates.

The thermodynamic conditions in the reactor are carefully chosen to produce wires with diameters in a narrow, specific range.

This nanofabrication method ensures high phase purity and crystallinity of nanowires.

Based on the results and theoretical work, it is concluded that the fabricated Ge98Dy2 materials are in a glassy state below 20 K.