Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells
Joint Authors
Wang, Fang-Hsing
Yang, Cheng-Fu
Tzeng, Hua-Tz
Huang, Chia-Cheng
Source
International Journal of Photoenergy
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-03-31
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO) was sintered at 1400°C as a target.
The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at 300°C by changing the deposition power from 50 W to 150 W.
The effects of deposition power on the crystallization size, lattice constant (c), resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied.
The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect.
The variations in the optical band gap (Eg) value of the GZO thin films were evaluated from the plots of (αhν)=c(hν-EG)1/2 , revealing that the measured Eg value decreased with increasing deposition power.
As compared with the results deposited at room temperature by Gong et al., (2010) the 300°C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger Eg value.
For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power.
The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.
American Psychological Association (APA)
Wang, Fang-Hsing& Huang, Chia-Cheng& Yang, Cheng-Fu& Tzeng, Hua-Tz. 2013. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells. International Journal of Photoenergy،Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-459092
Modern Language Association (MLA)
Wang, Fang-Hsing…[et al.]. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells. International Journal of Photoenergy No. 2013 (2013), pp.1-7.
https://search.emarefa.net/detail/BIM-459092
American Medical Association (AMA)
Wang, Fang-Hsing& Huang, Chia-Cheng& Yang, Cheng-Fu& Tzeng, Hua-Tz. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells. International Journal of Photoenergy. 2013. Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-459092
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-459092