Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering
Joint Authors
Li, Xin
Furuta, Mamoru
Li, Zeming
Li, Chaoyang
Kawaharamura, Toshiyuki
Wang, Dapeng
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-02-28
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Materials Science , Minerals
Civil Engineering
Abstract EN
ZnO thin films were deposited on quartz glasses by a radio frequency (rf) magnetron sputtering.
The mechanism for stoichiometry in the ZnO thin films was investigated by adjusting Ar/O2 working gas ratio during deposition.
The optical emission spectroscopy (OES) in situ measurement revealed the kinetics species variation during rf plasma deposition process.
It was found that the intensity of the excited atomic oxygen (O*) was increased with the oxygen ratio increasing, resulting in enhancing the oxidization effect during ZnO film fabrication.
On the contrary, the intensities of atomic zinc emission were gradually decreased, resulting in the zinc ratio in the film were decreased with the oxygen ratio increasing.
Therefore, it is possible to control the stoichiometry of ZnO film by simply adjusting the working gas ambient in the rf plasma deposition.
The structural and optical properties of ZnO thin films were investigated as well.
American Psychological Association (APA)
Li, Chaoyang& Wang, Dapeng& Li, Zeming& Li, Xin& Kawaharamura, Toshiyuki& Furuta, Mamoru. 2013. Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering. Journal of Materials،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-480443
Modern Language Association (MLA)
Li, Chaoyang…[et al.]. Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering. Journal of Materials No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-480443
American Medical Association (AMA)
Li, Chaoyang& Wang, Dapeng& Li, Zeming& Li, Xin& Kawaharamura, Toshiyuki& Furuta, Mamoru. Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering. Journal of Materials. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-480443
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-480443