Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition
Joint Authors
Feng, Lianghuan
Gao, Jingjing
Li, Wei
Tian, Caijuan
Zhang, Jingquan
Wu, Lili
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-03-06
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Chemical bath deposition (CBD) was used for the growth of Cd1−xZnxS thin films with low Zn content.
The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated.
The chemical growth mechanism of Cd1−xZnxS thin films was analyzed, and optimized growth conditions for the thin films were established.
The fill factor and short-circuit current were improved while Cd1−xZnxS was used to replace CdS as the window layer in CdTe solar cells.
American Psychological Association (APA)
Tian, Caijuan& Gao, Jingjing& Li, Wei& Feng, Lianghuan& Zhang, Jingquan& Wu, Lili. 2012. Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-480662
Modern Language Association (MLA)
Tian, Caijuan…[et al.]. Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition. International Journal of Photoenergy No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-480662
American Medical Association (AMA)
Tian, Caijuan& Gao, Jingjing& Li, Wei& Feng, Lianghuan& Zhang, Jingquan& Wu, Lili. Cd1−xZnxS Thin Films with Low Zn Content Prepared by Chemical Bath Deposition. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-480662
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-480662
