Nonstoichiometry in TiO2−y Studied by Ion Beam Methods and Photoelectron Spectroscopy
Author
Source
Advances in Materials Science and Engineering
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-13, 13 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-12-14
Country of Publication
Egypt
No. of Pages
13
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
This paper treats a problem of nonstoichiometry in TiO2−y thin films deposited by reactive sputtering at controlled sputtering rates.
Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometry y in the bulk and at the surface of TiO2−y layers.
The critical review of these experimental methods is given.
Defect structure responsible for the electrical resistivity of rutile TiO2 is discussed.
American Psychological Association (APA)
Zakrzewska, K.. 2011. Nonstoichiometry in TiO2−y Studied by Ion Beam Methods and Photoelectron Spectroscopy. Advances in Materials Science and Engineering،Vol. 2012, no. 2012, pp.1-13.
https://search.emarefa.net/detail/BIM-501267
Modern Language Association (MLA)
Zakrzewska, K.. Nonstoichiometry in TiO2−y Studied by Ion Beam Methods and Photoelectron Spectroscopy. Advances in Materials Science and Engineering No. 2012 (2012), pp.1-13.
https://search.emarefa.net/detail/BIM-501267
American Medical Association (AMA)
Zakrzewska, K.. Nonstoichiometry in TiO2−y Studied by Ion Beam Methods and Photoelectron Spectroscopy. Advances in Materials Science and Engineering. 2011. Vol. 2012, no. 2012, pp.1-13.
https://search.emarefa.net/detail/BIM-501267
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-501267
