High-Temperature Photovoltaic Effect in La0.4Ca0.6MnO3SiOxSi Heterojunction

Abstract EN

We fabricated a heterojunction of La0.4Ca0.6MnO3/SiOx/n-Si and investigated its electronic transport and ultraviolet photovoltaic properties at higher temperature up to 673 K.

The rectifying behaviors vanished with the energy-band structure evolvement from 300 to 673 K.

Under irradiation of a 248 nm pulse laser, the peak values of open-circuit photovoltage and short-circuit photocurrent decreased drastically.

This understanding of the temperature-related current-voltage behavior and ultraviolet photodetection of oxide heterostructures should open a route for devising future microelectronic devices working at high temperature.

PACS: 73.40.Lq, 71.27.+ a, 73.50.Pz.