Temperature dependence of Ac conductivity and complex dielectric constant of Cd2Si1-xGexO4 compound

Abstract EN

In this work, samples of Cd2Si1-xGexO4 prepared by powder technology for (x = 0, 0.3, 0.6) were studied.

The effect of (Ge) additives at different ratio of Ge (x = 0, 0.3, 0.6) on the behavior of dielectric constant, dielectric loss and a,c conductivity were measured as a function of temperature at a selected frequencies (0.01-10) MHz in the temperature range 298 K to 473 K.

The dielectric constant and dielectric loss obtained different behavior with the additives of (Ge).

The activation energy for the electrical conduction process was studied.