Simulation of 1.3μm quantum dot laser by using four levels rate equations model

Abstract EN

By using four-level rate equations model (4LREM), the dynamics of optical gain and output power in 1.3μm quantum dots laser (QD-laser) is investigated.

The numerical model of InAs/GaAs (QD-laser) covers four energy levels for electron.

In present model, hole dynamics effect, both homogeneous and inhomogeneous broadening effects are ignored.

Present results indicate to, a first and second lasing line, corresponding to the ground state, first excited state respectively appears at low bias current with injection current increasing.

As a result, the use of the four -level model described above potentially gives a more complete insight into the dynamics of quantum-dot semiconductor lasers.

This result very useful for the design of InAs / GaAs QD laser for communications applications.