تحضير أفلام رقيقة من Y2O3 مرسبة على ركائز من السيلكون و توصيفها

Abstract EN

Y2O3 thin films were prepared by electron-beam evaporation at room temperature on both p-type Si(331) and n-type Si(111) silicon (Si) substrates at a pressure of~10-6 mbar vacuum.

The crystal structure has been studied by X-ray diffraction (XRD).

All deposited thin films on p-type Si(331) substrates are started to crystallize at room temperature with energy gap of around (5.4)eV.

When these films are annealed at various temperatures 500-900 ºC, an improvement in the crystallization process is observed.

On increasing the annealing temperature the energy gap is shifted towards lower energy to reach (5)eV at 900ºC.

This can be habited to an increase of defects in the structure of Y2O3 films.

In comparisons, the deposited thin films on n-type Si(111) substrates start crystallization at room temperature with the energy gap of around (5)eV.

When these films are annealed at various temperatures 600-900 ºC, an improvement in the crystallization process is observed.

The energy gap is shifted towards higher energy to reach around (5.4)eV at 900ºC, which is may be due to the reduction of defects in the structure of Y2O3 films.