Simulation study of various layers and double δ-doping effect on device performance of InAlAs InGaAs InP HEMT
Joint Authors
Khan, A. B.
Anjum, S. G.
Siddiqui, M. J.
Source
Journal of New Technology and Materials
Issue
Vol. 7, Issue 1 (30 Jun. 2017), pp.76-82, 7 p.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2017-06-30
Country of Publication
Algeria
No. of Pages
7
Main Subjects
Information Technology and Computer Science
Abstract EN
The InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor) lattice matched to InP offers outstandinghigh frequency, low noise operation for low-noise amplifiers.
In this work, efforts have been made to study and optimize the device performance of 0.5 μm gate length double δ-doped InP-based In0.53Ga0.47As / In0.52Al0.48As HEMT with the help of the variation of various parameters like δ-doping, Schottky layer thickness, spacer layer thickness and gate length.
To study the impact of various parameters we use Atlas Silvaco TCAD numerical simulation tool.
We have performed characterization studies of two-dimensional electron gas (2DEG) in the channel layer, conduction band discontinuity (, transconductance (), threshold voltage ()and cut-off frequency ( to optimize the device performance.
And hence optimize figure of merit such as transconductance and cut-off thefrequency of the device.
American Psychological Association (APA)
Khan, A. B.& Anjum, S. G.& Siddiqui, M. J.. 2017. Simulation study of various layers and double δ-doping effect on device performance of InAlAs InGaAs InP HEMT. Journal of New Technology and Materials،Vol. 7, no. 1, pp.76-82.
https://search.emarefa.net/detail/BIM-785555
Modern Language Association (MLA)
Khan, A. B.…[et al.]. Simulation study of various layers and double δ-doping effect on device performance of InAlAs InGaAs InP HEMT. Journal of New Technology and Materials Vol. 7, no. 1 (2017), pp.76-82.
https://search.emarefa.net/detail/BIM-785555
American Medical Association (AMA)
Khan, A. B.& Anjum, S. G.& Siddiqui, M. J.. Simulation study of various layers and double δ-doping effect on device performance of InAlAs InGaAs InP HEMT. Journal of New Technology and Materials. 2017. Vol. 7, no. 1, pp.76-82.
https://search.emarefa.net/detail/BIM-785555
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 81-82
Record ID
BIM-785555
