خصائص نقل الإلكترون لكيوبت مقترنا بترانزستور الإلكترون المفرد : تأثير درجة حرارة الأقطاب

Abstract EN

In this study, theoretical treatment is presented to study the electron transport for a system consists of two principle coupled parts, these are the key element of quantum computer which is represented by the qubit and the detector which is represented by the single electron transistor.

In our treatment, model calculation is presented that includes the derivatives of the time dependent equations of motion that related to the system under consideration to find particular relations for the time variation of the occupation numbers of the qubit dots and the single electron transistor dot.

Also to find formula for the current, that flows from the left lead passing through the left tunnel barrier to the quantum dot of the single electron transistor, to investigate the electron transport dynamical properties in this system.

Since all the system parameters are taken into consideration in our study.

We conclude that the increasing of the leads temperature and the applying bias voltage enhance the localization of the electron on the far – removed quantum dot of the qubit