The effect of γ-irradiation on the structural and physical properties of CdSe thin films

Abstract EN

Thin film of CdSe has been deposited on to the clean glass substrate by using CBD technique at room temperature.

The samples are irradiated by γ-ray with various doses (0.25,0.5,1.0,1.5) Gy.

These films are characterized by XRD, which indicated that as-deposited CdSe layers and irradiated films at 0.25 and 0.5 Gy of γ- ray grow in cubic phase having preferred orientation along (111) plane in c-direction.

Further, the irradiated films at 1.0 and 1.5 Gy of γ- ray show polycrystalline in nature with a mixture of cubic along with hexagonal structures.

Optical absorption spectra of these thin films have been recorded using spectrophotometer.

The energy band gap has been determined using these spectra.

It is found that the energy band gap of CdSe film is 2.09 eV and it is increased with the increase of γ- irradiation dose.

The electrical conductivity measurements gave a decrease in conductivity with the increase of γ- irradiation dose.-