Effect of γ- irradiation on the n- porous silicon structures prepared by electrochemical etching

Abstract EN

Porous Silicon has been prepared by using electrochemical cell at room temperature with etching time (20 min), current (30 mA) and fixed electrolyte solution HF:C2H5OH(1:4).

The samples are irradiated by γ-ray with various doses (50,100) Gy.

Several techniques such as scanning electron microscope (SEM), X-ray diffraction (XRD) and Ramman Spectrum were used to study the influence of the γ- irradiation of porous silicon (PSi).

SEM images show the random distribution of pores that cover all the surface which have different sizes and spherical shapes.

XRD analysis, which indicated that n- type porous silicon and the samples irradiated at 50 and 100 Gy of γ- ray grow in hexagonal structure having preferred orientation along (002) plane in c-direction.

An extremely symmetric band shape were recognized from Raman spectra of PSi.