The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance
المؤلفون المشاركون
Ismail, Razali
Rahmani, Meisam
Ahmadi, Mohammad Taghi
Kiani, Mohammad Javad
Saeidmanesh, Mehdi
Karimi, F. A. Hediyeh
Akbari, Elnaz
Rahmani, Komeil
المصدر
العدد
المجلد 2013، العدد 2013 (31 ديسمبر/كانون الأول 2013)، ص ص. 1-8، 8ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2013-12-17
دولة النشر
مصر
عدد الصفحات
8
التخصصات الرئيسية
الملخص EN
Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics.
In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements.
In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers.
To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented.
Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device.
The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width.
In addition, the lower value of turn-on voltage appears as the more temperature increases.
Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Rahmani, Meisam& Ismail, Razali& Ahmadi, Mohammad Taghi& Kiani, Mohammad Javad& Saeidmanesh, Mehdi& Karimi, F. A. Hediyeh…[et al.]. 2013. The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-8.
https://search.emarefa.net/detail/BIM-1031487
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Rahmani, Meisam…[et al.]. The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance. Journal of Nanomaterials No. 2013 (2013), pp.1-8.
https://search.emarefa.net/detail/BIM-1031487
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Rahmani, Meisam& Ismail, Razali& Ahmadi, Mohammad Taghi& Kiani, Mohammad Javad& Saeidmanesh, Mehdi& Karimi, F. A. Hediyeh…[et al.]. The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-8.
https://search.emarefa.net/detail/BIM-1031487
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1031487
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر