Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuOp-Si Schottky Diodes

المؤلفون المشاركون

Çetinkaya, S.
Çetinkara, H. A.
Bayansal, F.
Kahraman, S.

المصدر

The Scientific World Journal

العدد

المجلد 2013، العدد 2013 (31 ديسمبر/كانون الأول 2013)، ص ص. 1-6، 6ص.

الناشر

Hindawi Publishing Corporation

تاريخ النشر

2013-05-23

دولة النشر

مصر

عدد الصفحات

6

التخصصات الرئيسية

الطب البشري
تكنولوجيا المعلومات وعلم الحاسوب

الملخص EN

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods.

Deposited CuO layers were characterized by SEM and XRD techniques.

From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method.

This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method.

For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature.

Conventional I-V and Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values.

It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

Çetinkaya, S.& Çetinkara, H. A.& Bayansal, F.& Kahraman, S.. 2013. Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuOp-Si Schottky Diodes. The Scientific World Journal،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1032551

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

Çetinkaya, S.…[et al.]. Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuOp-Si Schottky Diodes. The Scientific World Journal No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-1032551

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

Çetinkaya, S.& Çetinkara, H. A.& Bayansal, F.& Kahraman, S.. Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuOp-Si Schottky Diodes. The Scientific World Journal. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1032551

نوع البيانات

مقالات

لغة النص

الإنجليزية

الملاحظات

Includes bibliographical references

رقم السجل

BIM-1032551