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Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology
المؤلفون المشاركون
Tan, Michael Loong Peng
Chin, Huei Chaeng
Lim, Cheng Siong
Abdul Tahrim, ‘Aqilah binti
المصدر
العدد
المجلد 2015، العدد 2015 (31 ديسمبر/كانون الأول 2015)، ص ص. 1-13، 13ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2015-04-20
دولة النشر
مصر
عدد الصفحات
13
التخصصات الرئيسية
الملخص EN
The scaling process of the conventional 2D-planar metal-oxide semiconductor field-effect transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm process technology.
A new nonplanar device architecture called FinFET was invented to overcome the problem by allowing transistors to be scaled down into sub-20 nm region.
In this work, the FinFET structure is implemented in 1-bit full adder transistors to investigate its performance and energy efficiency in the subthreshold region for cell designs of Complementary MOS (CMOS), Complementary Pass-Transistor Logic (CPL), Transmission Gate (TG), and Hybrid CMOS (HCMOS).
The performance of 1-bit FinFET-based full adder in 16-nm technology is benchmarked against conventional MOSFET-based full adder.
The Predictive Technology Model (PTM) and Berkeley Shortchannel IGFET Model-Common Multi-Gate (BSIM-CMG) 16 nm low power libraries are used.
Propagation delay, average power dissipation, power-delay-product (PDP), and energy-delay-product (EDP) are analysed based on all four types of full adder cell designs of both FETs.
The 1-bit FinFET-based full adder shows a great reduction in all four metric performances.
A reduction in propagation delay, PDP, and EDP is evident in the 1-bit FinFET-based full adder of CPL, giving the best overall performance due to its high-speed performance and good current driving capabilities.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Abdul Tahrim, ‘Aqilah binti& Chin, Huei Chaeng& Lim, Cheng Siong& Tan, Michael Loong Peng. 2015. Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-13.
https://search.emarefa.net/detail/BIM-1069271
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Abdul Tahrim, ‘Aqilah binti…[et al.]. Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology. Journal of Nanomaterials No. 2015 (2015), pp.1-13.
https://search.emarefa.net/detail/BIM-1069271
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Abdul Tahrim, ‘Aqilah binti& Chin, Huei Chaeng& Lim, Cheng Siong& Tan, Michael Loong Peng. Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-13.
https://search.emarefa.net/detail/BIM-1069271
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1069271
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
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