Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates
المؤلفون المشاركون
Guo, Yao
Jia, Taixuan
Li, Chengbo
Niu, Yongsheng
Hou, Shaogang
Liu, Shuanjiang
المصدر
Advances in Condensed Matter Physics
العدد
المجلد 2016، العدد 2016 (31 ديسمبر/كانون الأول 2016)، ص ص. 1-7، 7ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2016-03-13
دولة النشر
مصر
عدد الصفحات
7
التخصصات الرئيسية
الملخص EN
The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ) (111) substrates are investigated using first-principles calculations based on density functional theory with GGA + U method.
Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface.
Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111) surfaces at the initial growth stage have been studied.
The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001) // CeSZ (111) and InN [ 11 2 ¯ 0 ] // CeSZ [ 1 1 ¯ 0 ] .
In addition, density of states (DOS) analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111) surfaces.
Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films.
It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Guo, Yao& Jia, Taixuan& Li, Chengbo& Niu, Yongsheng& Hou, Shaogang& Liu, Shuanjiang. 2016. Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates. Advances in Condensed Matter Physics،Vol. 2016, no. 2016, pp.1-7.
https://search.emarefa.net/detail/BIM-1094954
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Guo, Yao…[et al.]. Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates. Advances in Condensed Matter Physics No. 2016 (2016), pp.1-7.
https://search.emarefa.net/detail/BIM-1094954
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Guo, Yao& Jia, Taixuan& Li, Chengbo& Niu, Yongsheng& Hou, Shaogang& Liu, Shuanjiang. Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates. Advances in Condensed Matter Physics. 2016. Vol. 2016, no. 2016, pp.1-7.
https://search.emarefa.net/detail/BIM-1094954
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1094954
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر