Electrical Response of CdS Thin Film and CdSSi Heterojunction to Gamma Radiation

الملخص EN

Gamma irradiation method has been used to change the electrical properties of CdS thin film.

A specific dose of γ-irradiation increases the activation energy of CdS thin film.

In addition, γ-irradiation was used to change the sign of Hall coefficient, R H , of CdS thin film from negative to positive irrespective of temperature.

The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature.

In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation.

Several parameters were also studied such as charge carrier concentration, N D , and flat band potential, V fb .

The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.