Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2Al2O3 Stacks for Use in Charge Trapping Flash Memories
المؤلفون المشاركون
Novkovski, Nenad
Paskaleva, Albena
Skeparovski, Aleksandar
Spassov, Dencho
المصدر
Advances in Condensed Matter Physics
العدد
المجلد 2018، العدد 2018 (31 ديسمبر/كانون الأول 2018)، ص ص. 1-9، 9ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2018-05-02
دولة النشر
مصر
عدد الصفحات
9
التخصصات الرئيسية
الملخص EN
Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed.
Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented.
By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V), several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted.
We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer.
C-V characteristics of stressed (with write and erase pulses) structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur) were used in order to provide measures of the effect of stresses with no influence of the measurement process.
Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles.
The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Novkovski, Nenad& Paskaleva, Albena& Skeparovski, Aleksandar& Spassov, Dencho. 2018. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2Al2O3 Stacks for Use in Charge Trapping Flash Memories. Advances in Condensed Matter Physics،Vol. 2018, no. 2018, pp.1-9.
https://search.emarefa.net/detail/BIM-1117207
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Novkovski, Nenad…[et al.]. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2Al2O3 Stacks for Use in Charge Trapping Flash Memories. Advances in Condensed Matter Physics No. 2018 (2018), pp.1-9.
https://search.emarefa.net/detail/BIM-1117207
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Novkovski, Nenad& Paskaleva, Albena& Skeparovski, Aleksandar& Spassov, Dencho. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2Al2O3 Stacks for Use in Charge Trapping Flash Memories. Advances in Condensed Matter Physics. 2018. Vol. 2018, no. 2018, pp.1-9.
https://search.emarefa.net/detail/BIM-1117207
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1117207
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر