Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering
المؤلفون المشاركون
Sittimart, Phongsaphak
Nopparuchikun, Adison
Promros, Nathaporn
المصدر
Advances in Materials Science and Engineering
العدد
المجلد 2017، العدد 2017 (31 ديسمبر/كانون الأول 2017)، ص ص. 1-8، 8ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2017-03-02
دولة النشر
مصر
عدد الصفحات
8
الملخص EN
In this study, n-type β-FeSi2/p-type Si heterojunctions, inside which n-type β-FeSi2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560°C and Ar pressure of 2.66×10-1 Pa.
The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung’s and Norde’s methods.
Computation using the TE theory showed that the values of ideality factor (n) were 1.71 at 300 K and 16.83 at 20 K, while the barrier height (ϕb) values were 0.59 eV at 300 K and 0.06 eV at 20 K.
Both of the n and ϕb values computed using the TE theory were in agreement with those computed using Cheung’s and Norde’s methods.
The values of series resistance (Rs) computed at 300 K and 20 K by Norde’s method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the Rs values found through computation by Cheung’s method.
The dramatic increment of Rs value at low temperatures was likely attributable to the increment of n value at low temperatures.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Sittimart, Phongsaphak& Nopparuchikun, Adison& Promros, Nathaporn. 2017. Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering. Advances in Materials Science and Engineering،Vol. 2017, no. 2017, pp.1-8.
https://search.emarefa.net/detail/BIM-1124506
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Sittimart, Phongsaphak…[et al.]. Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering. Advances in Materials Science and Engineering No. 2017 (2017), pp.1-8.
https://search.emarefa.net/detail/BIM-1124506
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Sittimart, Phongsaphak& Nopparuchikun, Adison& Promros, Nathaporn. Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering. Advances in Materials Science and Engineering. 2017. Vol. 2017, no. 2017, pp.1-8.
https://search.emarefa.net/detail/BIM-1124506
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1124506
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر