Understanding the Resistive Switching Phenomena of Stacked AlAl2O3Al Thin Films from the Dynamics of Conductive Filaments
المؤلفون المشاركون
Molina-Reyes, Joel
Hernandez-Martinez, Luis
المصدر
العدد
المجلد 2017، العدد 2017 (31 ديسمبر/كانون الأول 2017)، ص ص. 1-10، 10ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2017-09-20
دولة النشر
مصر
عدد الصفحات
10
التخصصات الرئيسية
الملخص EN
We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD).
A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing.
Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements.
These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V.
In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating.
This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Molina-Reyes, Joel& Hernandez-Martinez, Luis. 2017. Understanding the Resistive Switching Phenomena of Stacked AlAl2O3Al Thin Films from the Dynamics of Conductive Filaments. Complexity،Vol. 2017, no. 2017, pp.1-10.
https://search.emarefa.net/detail/BIM-1143503
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Molina-Reyes, Joel& Hernandez-Martinez, Luis. Understanding the Resistive Switching Phenomena of Stacked AlAl2O3Al Thin Films from the Dynamics of Conductive Filaments. Complexity No. 2017 (2017), pp.1-10.
https://search.emarefa.net/detail/BIM-1143503
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Molina-Reyes, Joel& Hernandez-Martinez, Luis. Understanding the Resistive Switching Phenomena of Stacked AlAl2O3Al Thin Films from the Dynamics of Conductive Filaments. Complexity. 2017. Vol. 2017, no. 2017, pp.1-10.
https://search.emarefa.net/detail/BIM-1143503
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1143503
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر