Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2Ar Plasma Pretreatment

الملخص EN

Photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoOx) as hole-selective layers (HSLs) were demonstrated.

A H2/Ar plasma pretreatment (PPT) was incorporated into a MoOx/p-Si(100) interface, which shows the expected quality in terms of passivation.

Moreover, the charge trapping characteristics of the MoOx/p-Si(100) interface were presented.

The PPT parameters, including power, treated time, flow ratio of H2/Ar, and temperature, were investigated.

The experimental results indicate that the Si-H bond with a relatively high intensity was demonstrated for the H2/Ar PPT.

The achievement of a conversion efficiency (CE) improvement of more than 1.2% absolute from 18.3% to 19.5% for SPSSCs with H2/Ar PPT was explored.

The promoted mechanism was attributed to the reduction of the interface trap density caused by the large number of Si-H bonds at the silicon substrate and MoOx interface.