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Analysis of Electrical Characteristics of Pdn-Nanocarbonp-Si Heterojunction Diodes: By C-V-f and Gw-V-f
المؤلفون المشاركون
Sittimart, Phongsaphak
Zkria, Abdelrahman
Abubakr, Eslam
Yoshitake, Tsuyoshi
المصدر
العدد
المجلد 2020، العدد 2020 (31 ديسمبر/كانون الأول 2020)، ص ص. 1-9، 9ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2020-07-17
دولة النشر
مصر
عدد الصفحات
9
التخصصات الرئيسية
الملخص EN
Diamond films are candidate for a wide range of applications, due to their wide band gap, high thermal conductivity, and chemical stability.
In this report, diamond-based heterojunction diodes (HJDs) were fabricated by growing n-type nanocarbon composite in the form of nitrogen-doped ultrananocrystalline diamond/amorphous carbon (UNCD/a-C:H:N) films onto p-type Si substrates.
X-ray photoemission and the Fourier transform infrared spectroscopies were employed to examine the contribution of nitrogen atoms from the gas phase into the deposited films.
The results indicate the incorporation of nitrogen atoms into the grain boundaries of UNCD/a-C:H film by replacing hydrogen atoms.
The capacitance- (C-V-f), conductance- (G/ω-V-f), and series resistance-voltage characteristics of the fabricated Pd/n-(UNCD/a-C:H:N)/p-Si HJDs were studied in the frequency range of 40 kHz-2 MHz.
The existence of interface states (Nss) and series resistance (Rs) were attributed to the interruption of the periodic lattice structure at the surface of the fabricated junction as well as the defects on the (UNCD/a-C:H:N)/Si interface.
By increasing the frequency (≥500 kHz), the Nss reveals an almost frequency-independent behavior, which indicates that the charges at the interface states cannot follow ac signal at higher frequency.
The obtained results demonstrated that the UNCD/a-C:H:N is a promising n-type semiconductor for diamond-based heterostructure diodes.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Zkria, Abdelrahman& Abubakr, Eslam& Sittimart, Phongsaphak& Yoshitake, Tsuyoshi. 2020. Analysis of Electrical Characteristics of Pdn-Nanocarbonp-Si Heterojunction Diodes: By C-V-f and Gw-V-f. Journal of Nanomaterials،Vol. 2020, no. 2020, pp.1-9.
https://search.emarefa.net/detail/BIM-1188445
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Zkria, Abdelrahman…[et al.]. Analysis of Electrical Characteristics of Pdn-Nanocarbonp-Si Heterojunction Diodes: By C-V-f and Gw-V-f. Journal of Nanomaterials No. 2020 (2020), pp.1-9.
https://search.emarefa.net/detail/BIM-1188445
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Zkria, Abdelrahman& Abubakr, Eslam& Sittimart, Phongsaphak& Yoshitake, Tsuyoshi. Analysis of Electrical Characteristics of Pdn-Nanocarbonp-Si Heterojunction Diodes: By C-V-f and Gw-V-f. Journal of Nanomaterials. 2020. Vol. 2020, no. 2020, pp.1-9.
https://search.emarefa.net/detail/BIM-1188445
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1188445
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
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