Nanorods ZnO thin film grown by hydrothermal method based planar and vertical Pd ZnO Schottky diode configurations

المؤلفون المشاركون

Ali, Ghusun M.
Armuti, Shahd Talib

المصدر

Journal of Engineering and Sustainable Development

الناشر

الجامعة المستنصرية كلية الهندسة

تاريخ النشر

2020-12-31

دولة النشر

العراق

عدد الصفحات

7

التخصصات الرئيسية

الهندسة الكهربائية

الموضوعات

• التبخر
• الأغشية الرقيقة
• التوليف الحراري المائي

الملخص الإنجليزي

Manufacture and characterization of this paper for nanorods ZnO based planar and vertical Schottky diodes is presented.

The ZnO thin film was grown on n-Si-<100 > substrates by the hydrothermal process.

The performance of the planner Pd/ZnO/Al and Pd/ZnO/Si/Ti/Al vertical diode configurations were analyses and compared.

Palladium, titanium, and aluminum have been deposited by thermal evaporation use masks of metal.

The crystalline structure and surface morphological details for thin films for ZnO nanorods were described by using (XRD) and (SEM).

By applying voltage range from -2 V to 2 V Was measured (I-V) characteristics for two devices.

The resulting data for both configurations show a typical exponential relationship between applied voltage and output current for the Schottky barrier diode.

According to the measured I-V characteristics electrical parameters are extracted, for example, saturation current, ideality factor, barrier height, and rectification ratio.

The simple low-cost nanorods Schottky diodes based on ZnO thin film make them a promising candidate in many electronics and optoelectronic Manufacture and characterization of this paper for nanorods ZnO based planar and vertical Schottky diodes is presented.

The ZnO thin film was grown on n-Si-<100 > substrates by the hydrothermal process.

The performance of the planner Pd/ZnO/Al and Pd/ZnO/Si/Ti/Al vertical diode configurations were analyses and compared.

Palladium, titanium, and aluminum have been deposited by thermal evaporation use masks of metal.

The crystalline structure and surface morphological details for thin films for ZnO nanorods were described by using (XRD) and (SEM).

By applying voltage range from -2 V to 2 V Was measured (I-V) characteristics for two devices.

The resulting data for both configurations show a typical exponential relationship between applied voltage and output current for the Schottky barrier diode.

According to the measured I-V characteristics electrical parameters are extracted, for example, saturation current, ideality factor, barrier height, and rectification ratio.

The simple low-cost nanorods Schottky diodes based on ZnO thin film make them a promising candidate in many electronics and optoelectronic applications.

نوع البيانات

أوراق مؤتمرات

رقم السجل

BIM-1263613

• APA
• MLA
• AMA