Al0.3ga0.7as-GaAs heterojunction diode analysis

المؤلفون المشاركون

Hashim, Munir A.
Muhammad, Sarah Karim

المصدر

Journal of Engineering and Sustainable Development

الناشر

الجامعة المستنصرية كلية الهندسة

تاريخ النشر

2020-12-31

دولة النشر

العراق

عدد الصفحات

11

التخصصات الرئيسية

الهندسة الكهربائية

الموضوعات

• المجالات الكهربائية

الملخص العربي

Theoretical treatment by analysis the Al0.3Ga0.7As/

الملخص الإنجليزي

Theoretical treatment by analysis the Al0.3Ga0.7As/GaAs for long and short heterojunction diode is presented.

The analysis is started by obtaining the built-in potential from the structure of diode, then the electric field and potential distribution are attained using different concentrations.

In case of equal concentration, the maximum field is (4.32×104 V/cm) and potential with maximum peak at (1.2V), the depletion layer capacitance was also defined at applied voltage (VR) with value about (11.6x1015 F/cm2).

According to the type of doping in (P-n) heterojunction the injected minority carrier and current densities analysis are achieved when applying voltage (+0.8 V) for forward bias and (-0.8 V) for reverse bias for both long and short diode, respectively.

The value of minority carriers in n-side for both short and long diode is about (10.8X109cm-3) at forward bias.

The (I-V) characteristics for two diodes (long and short) is executed using the Drift-diffusion model.

The resulting for the (I-V) characteristics show typical exponential relationship between the applied voltage and output current in Cartesian and semi-log plots.

The complete modeling of the device is achieved by MATLAB software.

نوع البيانات

أوراق مؤتمرات

رقم السجل

BIM-1269236

• APA
• MLA
• AMA