Pentacene based organic field effect transistor using different gate dielectric

الملخص EN

This paper presents the electrical behavior of the top contact/ bottom gate of an organic field-effect transistor (OFET) utilizing Pentacene as a semiconductor layer with two distinctive gate dielectric materials Polyvinylpyrrolidone (PVP) and Zirconium oxide (ZrO2) were chosen.

The influence of the monolayer and bilayer gates insulator on OFET performance was investigated.

MATLAB software was used to simulate and determine the electrical characteristics of a device.

The output and transfer characteristics were studied for ZrO2, PVP and ZrO2/PVP as an organic gate insulator layer.

Both characteristics show a high drain current at the gate dielectric ZrO2/PVP equal to -0.0031A and -0.0015A for output and transfer characteristics respectively, this can be attributed to an increase in the dielectric capacitance.

Trans conductance characteristics also studied the gate dielectric materials and show the ZrO2/PVP gate dielectric having a higher value from the monolayer, indicating the effect of dielectric This paper presents the electrical behavior of the top contact/ bottom gate of an organic field-effect transistor (OFET) utilizing Pentacene as a semiconductor layer with two distinctive gate dielectric materials Polyvinylpyrrolidone (PVP) and Zirconium oxide (ZrO2) were chosen.

The influence of the monolayer and bilayer gates insulator on OFET performance was investigated.

MATLAB software was used to simulate and determine the electrical characteristics of a device.

The output and transfer characteristics were studied for ZrO2, PVP and ZrO2/PVP as an organic gate insulator layer.

Both characteristics show a high drain current at the gate dielectric ZrO2/PVP equal to -0.0031A and -0.0015A for output and transfer characteristics respectively, this can be attributed to an increase in the dielectric capacitance.

Trans conductance characteristics also studied the gate dielectric materials and show the ZrO2/PVP gate dielectric having a higher value from the monolayer, indicating the effect of dielectric capacitance.