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Annealing effect on the SnSe nanocrystalline thin films and the photovoltaic properties of the p-SnSen-Si heterojunction solar cells
المؤلفون المشاركون
Salman, Siham Hasan
Ahmad, Ghalan Sarhan
Rabia, Raja Faysal
al-Mayyali, Bushra Kazim Hassun
المصدر
Iraqi Journal of Industrial Research
العدد
المجلد 8، العدد 2 (31 أغسطس/آب 2021)، ص ص. 41-49، 9ص.
الناشر
وزارة الصناعة و المعادن هيئة البحث و التطوير الصناعي
تاريخ النشر
2021-08-31
دولة النشر
العراق
عدد الصفحات
9
التخصصات الرئيسية
الموضوعات
الملخص EN
A thin film of SnSe were deposited by thermal evaporation technique on 400 ±20 nm thick glass substrates of these films were annealed at different temperatures (100, 150, 200 ⁰C), The effect of annealing on the characteristics of the nano crystalline SnSe thin films was investigated using XRD, UV-VIS orption spectroscopy, Atomic Force Microscope (AFM), and Hall effect measurements.
The results of X-ray displayed that all the thin films have polycrystalline and orthorhombic structure in nature, while UV-VIS study showed that the SnSe has direct band gap of nano crystalline and it is changed from 60.12 to 94.70 nm with increasing annealing temperature.
Hall effect measurements showed that all the films have a positive Hall coefficient, which means that the conductivity of the films is p-type.
The conductivity of SnSe films was increased with increasing annealing temperatures (except that at 200⁰C).
The I-V characteristics under illumination for the "p-SnSe/n-Si” solar cell displayed an increase in conversion efficiency with increasing annealing temperature from R.
T to 150⁰C, while at 200⁰C, this efficiency was decreased.
The measurements of the C-V characteristics displayed that all junctions were abrupt type.
It is clear from C-V measurements that the capacitance decreased with increasing reverse bias voltage which leads to an increase in the depletion A thin film of SnSe were deposited by thermal evaporation technique on 400 ±20 nm thick glass substrates of these films were annealed at different temperatures (100, 150, 200 ⁰C), The effect of annealing on the characteristics of the nano crystalline SnSe thin films was investigated using XRD, UV-VIS orption spectroscopy, Atomic Force Microscope (AFM), and Hall effect measurements.
The results of X-ray displayed that all the thin films have polycrystalline and orthorhombic structure in nature, while UV-VIS study showed that the SnSe has direct band gap of nano crystalline and it is changed from 60.12 to 94.70 nm with increasing annealing temperature.
Hall effect measurements showed that all the films have a positive Hall coefficient, which means that the conductivity of the films is p-type.
The conductivity of SnSe films was increased with increasing annealing temperatures (except that at 200⁰C).
The I-V characteristics under illumination for the "p-SnSe/n-Si” solar cell displayed an increase in conversion efficiency with increasing annealing temperature from R.
T to 150⁰C, while at 200⁰C, this efficiency was decreased.
The measurements of the C-V characteristics displayed that all junctions were abrupt type.
It is clear from C-V measurements that the capacitance decreased with increasing reverse bias voltage which leads to an increase in the depletion width.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Ahmad, Ghalan Sarhan& al-Mayyali, Bushra Kazim Hassun& Salman, Siham Hasan& Rabia, Raja Faysal. 2021. Annealing effect on the SnSe nanocrystalline thin films and the photovoltaic properties of the p-SnSen-Si heterojunction solar cells. Iraqi Journal of Industrial Research،Vol. 8, no. 2, pp.41-49.
https://search.emarefa.net/detail/BIM-1366661
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Ahmad, Ghalan Sarhan…[et al.]. Annealing effect on the SnSe nanocrystalline thin films and the photovoltaic properties of the p-SnSen-Si heterojunction solar cells. Iraqi Journal of Industrial Research Vol. 8, no. 2 (2021), pp.41-49.
https://search.emarefa.net/detail/BIM-1366661
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Ahmad, Ghalan Sarhan& al-Mayyali, Bushra Kazim Hassun& Salman, Siham Hasan& Rabia, Raja Faysal. Annealing effect on the SnSe nanocrystalline thin films and the photovoltaic properties of the p-SnSen-Si heterojunction solar cells. Iraqi Journal of Industrial Research. 2021. Vol. 8, no. 2, pp.41-49.
https://search.emarefa.net/detail/BIM-1366661
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references : p. 48-49
رقم السجل
BIM-1366661
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
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